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MoS₂-HfO₂ Field Effect Transistor | COMSOL Multiphysics Semiconductor Si...



๐Ÿงช COMSOL Multiphysics Simulation of MoS₂-HfO₂ Semiconductor Field Effect Transistor (FET) ๐Ÿงช In this video, we simulate a next-generation *Semiconductor Field Effect Transistor (FET)* using *Molybdenum Disulfide (MoS₂)* as the channel material and *Hafnium Dioxide (HfO₂)* as the high-k gate dielectric. The model is developed and analyzed using *COMSOL Multiphysics* with the Semiconductor Module. ๐Ÿ“ Want the COMSOL model file or full project report? Drop a comment or reach out! www.matlabprojectscode.com | WhatsApp/Call +91 83000 15425 | matlabprojectscode@gmail.com ๐Ÿ“Œ Key Features:
  • 2D device structure of MoS₂-HfO₂ FET
  • Semiconductor physics and electrical characteristics
  • Gate voltage sweep and I-V characteristic extraction
  • Material modeling using COMSOL Semiconductor Module
  • Real-world nanodevice simulation approach
๐Ÿ›  Tools & Modules Used:
  • COMSOL Multiphysics
  • Semiconductor Module
  • Geometry & Materials: MoS₂ channel, HfO₂ gate oxide, metal contacts
  • Meshing, Study, and Postprocessing
๐ŸŽ“ Ideal For:
  • Nanotechnology and Semiconductor Device Research
  • VLSI and Nanoelectronics Projects
  • COMSOL users and device physicists
  • M.Tech/PhD level academic simulations
๐Ÿ“ข LIKE ๐Ÿ”” | SHARE ↗️ | SUBSCRIBE ๐Ÿ“Œ for more semiconductor and COMSOL-based content! #COMSOL #SemiconductorFET #MoS2 #HfO2 #FieldEffectTransistor #NanodeviceSimulation #COMSOLMultiphysics #Nanoelectronics #VLSIProjects

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