๐งช COMSOL Multiphysics Simulation of MoS₂-HfO₂ Semiconductor Field Effect Transistor (FET) ๐งช
In this video, we simulate a next-generation *Semiconductor Field Effect Transistor (FET)* using *Molybdenum Disulfide (MoS₂)* as the channel material and *Hafnium Dioxide (HfO₂)* as the high-k gate dielectric. The model is developed and analyzed using *COMSOL Multiphysics* with the Semiconductor Module.
๐ Want the COMSOL model file or full project report? Drop a comment or reach out!
www.matlabprojectscode.com | WhatsApp/Call +91 83000 15425 | matlabprojectscode@gmail.com
๐ Key Features:
- 2D device structure of MoS₂-HfO₂ FET
- Semiconductor physics and electrical characteristics
- Gate voltage sweep and I-V characteristic extraction
- Material modeling using COMSOL Semiconductor Module
- Real-world nanodevice simulation approach
- COMSOL Multiphysics
- Semiconductor Module
- Geometry & Materials: MoS₂ channel, HfO₂ gate oxide, metal contacts
- Meshing, Study, and Postprocessing
- Nanotechnology and Semiconductor Device Research
- VLSI and Nanoelectronics Projects
- COMSOL users and device physicists
- M.Tech/PhD level academic simulations
Comments
Post a Comment