๐งช COMSOL Multiphysics Simulation of MoS₂-HfO₂ Semiconductor Field Effect Transistor (FET) ๐งช In this video, we simulate a next-generation *Semiconductor Field Effect Transistor (FET)* using *Molybdenum Disulfide (MoS₂)* as the channel material and *Hafnium Dioxide (HfO₂)* as the high-k gate dielectric. The model is developed and analyzed using *COMSOL Multiphysics* with the Semiconductor Module. ๐ Want the COMSOL model file or full project report? Drop a comment or reach out! www.matlabprojectscode.com | WhatsApp/Call +91 83000 15425 | matlabprojectscode@gmail.com ๐ Key Features: 2D device structure of MoS₂-HfO₂ FET Semiconductor physics and electrical characteristics Gate voltage sweep and I-V characteristic extraction Material modeling using COMSOL Semiconductor Module Real-world nanodevice simulation approach ๐ Tools & Modules Used: COMSOL Multiphysics Semiconductor Module Geometry & Materials: MoS₂ channel, HfO₂ gate oxide, metal contacts Meshing, Study, and ...